Now showing items 1-3 of 3
Spice model improvement for annular MOSFET simulation using automated parameter extraction
In industry, the creation of an accurate standard MOSFET model in a new technology may take several months. After the model is developed, it can be use to predict the behavior of devices created under the same process, ...
Development of an analytical trapezoidal MOSFET model: Used in a methodology for gate enclosed MOS transistors design based on technology layout rules
Gate enclosed or annular MOS transistors are one of the more successful solutions to improve the radiation resistance in an electronic circuit. There are many types of research and works regarding one of the main issues ...
Automated quantification of reverse recovery parameters for fast LDMOS devices
The technological community is focused in increasing the operating frequency of power devices. There have been numerous efforts to develop transistors which are able to handle significant amounts of current at high-speeds. ...