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dc.contributor.authorLysenko, Sergiy
dc.contributor.authorFernández, Felix
dc.contributor.authorRúa, Armando
dc.contributor.authorAparicio-Bolaños, Joaquín A.
dc.contributor.authorSepúlveda, Nelson
dc.contributor.authorFigueroa, Jose
dc.contributor.authorVargas, Kevin
dc.contributor.authorCordero, Joseph
dc.identifier.citationLysenko, S. s., Fernández, F., Rúa, A., Aparicio, J., Sepúlveda, N., Figueroa, J., & ... Cordero, J. (2015). Light scattering by epitaxial VO2 films near the metal-insulator transition point. Journal Of Applied Physics, 117(18), 184304-1-184304-11.en_US
dc.description.abstractExperimental observation of metal-insulator transition in epitaxial films of vanadium dioxide is reported. Hemispherical angle-resolved light scattering technique is applied for statistical analysis of the phase transition processes on mesoscale. It is shown that the thermal hysteresis strongly depends on spatial frequency of surface irregularities. The transformation of scattering indicatrix depends on sample morphology and is principally different for the thin films with higher internal elastic strain and for the thicker films where this strain is suppressed by introduction of misfit dislocations. The evolution of scattering indicatrix, fractal dimension, surface power spectral density, and surface autocorrelation function demonstrates distinctive behavior which elucidates the influence of structural defects and strain on thermal hysteresis, twinning of microcrystallites, and domain formation during the phase transition.en_US
dc.publisher"American Institute of Physics (AIP) Publishing "en_US
dc.subjectLight scatteringen_US
dc.subjectVO2 filmsen_US
dc.subjectMetal-insulator transition pointen_US
dc.titleLight scattering by epitaxial VO2 films near the metal-insulator transition pointen_US
dc.local.FacultySelect from the list belowen_US
dc.contributor.campusUniversity of Puerto Rico at Ponce

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